Description:
Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.6 ℃/W Rthj-a 62.5 ℃/W Data and specifications subject to change without notice Parameter Thermal Data Operating Junction Temperature Range -55 to 150 Continuous Drain Current, VGS @ 10V 8.8 Storage Temperature Range Total Power Dissipation 34.7 -55 to 150 Continuous Drain Current, VGS @ 10V 5.6 Pulsed Drain Current1 30 Drain-Source Voltage 120 Gate-Source Voltage +20 200911063 1 AP9997AGH-HF Halogen-Free Product Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Parameter Rating G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
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