Transistor K75H603 IGBT Canal N 600V 80A (IKW75N60H3)

Carasteristicas:

• Type of IGBT Channel: N-Channel
• Maximum Power Dissipation (Pc), W: 428
• Maximum Collector-Emitter Voltage |Vce|, V: 600
• Maximum Gate-Emitter Voltage |Vge|, V: 20
• Maximum Collector Current |Ic| @25℃, A: 80
• Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
• Maximum G-E Threshold Voltag |VGE(th)|, V: 5.7
• Maximum Junction Temperature (Tj), ℃: 175
• Rise Time (tr), typ, nS: 60
• Collector Capacity (Cc), typ, pF: 240
• Total Gate Charge (Qg), typ, nC: 470